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| Silicon Low Leakage Diode Array Low-leakage applications q Medium speed switching times q Connected in series q BAV 199 Type BAV 199 Marking JYs Ordering Code (tape and reel) Q62702-A921 Pin Configuration Package1) SOT-23 Maximum Ratings per Diode Parameter Reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 s Total power dissipation, TS = 31 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS Symbol VR VRM IF IFS Ptot Tj Tstg Values 70 70 200 4.5 330 150 - 65 ... + 150 Unit V mA A mW C 500 360 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BAV 199 Electrical Characteristics per Diode at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) = 100 A Forward voltage IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA Reverse current VR = 70 V VR = 70 V, TA = 150 C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 measured at IR = 1 mA CD trr - - 2 0.5 - 3 pF s Values typ. max. Unit V(BR) VF 70 - - V mV - - - - IR - - - - - - - - 900 1000 1100 1250 nA 5 80 Test circuit for reverse recovery time Pulse generator: tp = 5 s, D = 0.05 tr = 0.6 ns, Rj = 50 Oscillograph: R = 50 tr = 0.35 ns C 1 pF Semiconductor Group 2 BAV 199 Forward current IF = f (TA*; TS) * Package mounted on epoxy Reverse current IR = f (TA) Forward current IF = f (VF) TA = 25 C Peak forward current IFM = f (t) Semiconductor Group 3 BAV 199 Forward voltage VF = f (TA) Semiconductor Group 4 |
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